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QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 1 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com p ad configuration p ad no. symbol 1 rf in 2 , 1 2 v g 1 2 3, 1 1 v d1 4, 10 v d 2 5, 9 v g3 6, 8 v d 3 7 rf out applications ? test instrumen tation ? electronic warfare (ew) ? radar ? communication s general description qorvo s qp a 1013d is a broadband high power mmic a mplifier fabricated on q orvo s prod uction 0.1 5um gan on sic process (qga n15) . the qp a 1013d operates from 6 C 1 8 ghz and provides more than 10w saturated output power with power - added efficiency > 2 0 % and large - signal gain > 2 0 db . this combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. th e QPA1013D is matched to 50? with i ntegrated dc blocking capacitor s on both rf i/o port s simplifying system integration . the broadband performance makes it ideally suited in support of test instrumentation and electronic warfare , as well as, supporting multiple radar a nd communication bands . the QPA1013D is 100% dc and rf tested on - wafer to ensure compliance to electrical specifications . lead - free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description qpa1013 d 3a001.b.2.c 6 C 1 8 ghz 1 0 w gan power amplifier product features ? frequency range: 6 C 18 ghz ? p out : > 4 0 dbm @ p in = 20dbm ? pae : > 2 0 % @ p in = 20 dbm ? large signal gain: > 2 0 db @ p in = 20dbm ? small signal gain: >25db ? return loss: > 6.5 db ? bias : v d = 20 v , i d q = 12 5 0 ma , v g = - 2. 4 v typical ? chip dimensions: 5.05 x 3.55 x 0.10 mm functional block diagram
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 2 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com absolute maximum ratings parameter value drain voltage (v d ) 29 .5 v gate voltage range (v g ) - 8 to 0 v drain current (i d 1 ) 480ma drain current ( i d 2 ) 720ma drain current (i d 3 ) 2880ma gate current s (i g 1 /i g 2 /i g 3) see p lot on page 3 power dissipation (p diss ) , 85c , cw 7 5 w input power (p in ), 50, v d = 20 v , i dq = 1250 ma, 85c , cw 28 dbm input power (p in ) , vswr 3 :1, v d = 20 v , i dq = 1250 ma, 85c , cw 28 dbm channel t emperature (t ch ) 275c mounting temperature (30 s econds) 320c storage temperature - 55 to 150 c operation of this device outsid e the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 20 v drain cur rent (i d q ) 12 5 0 m a (total) gate voltage (v g ) - 2.4 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unle ss otherwise noted: 25c , v d = 20 v, i d q = 12 5 0 m a, v g = - 2. 4 v typical parameter min typical max units operational frequency range 6 1 8 ghz small signal gain >25 db input return loss >6.5 db output return loss >7 db power gain (pin = 20 dbm) > 20 db output power (pin = 20 dbm) > 4 0 db m power added efficiency (pin = 20 dbm) 22 % small signal gain temperature coefficient - 0.0 61 db/ c output power temperature coefficient ( calculated from 25c to 85c) (pin = 20 dbm ) - 0. 0 17 dbm/ c
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 3 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , cw v d = 20v , i d q = 1250ma p diss = 25 w 2. 48 oc/w channel temperature (t ch ) (no rf drive) 147 c median lifetime (t m ) 1.2 x 10^ 10 hrs thermal resistance ( jc ) (1) t base = 85 c , v d = 20v , i d q = 1250ma, cw i d _drive = 3.3a, freq = 12ghz p in = 22dbm, p out = 42dbm, p diss = 49w 2.99 oc/w channel temperature (t ch ) (under rf drive) 231 c median lifetime (t m ) 4.7 x 10^6 hrs notes: 1. thermal resistance measured to back of c a rrier plate. mmic mounted on 40 mils cum o (80/2 0) carrier using 3 mil ausn. test conditions: v d = 2 8 v; failure criter ia = 10% reduction in i d _max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet16 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 25 30 35 40 45 50 55 60 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = + 85 c cw 0 10 20 30 40 50 60 70 80 90 100 110 120 125 135 145 155 165 175 185 195 205 215 225 maximum gate current (ma) channel temperature ( c) i g_max vs. t ch vs. stage total ig_max ig1 ig2 ig3 0 5 10 15 20 25 30 35 40 45 50 55 60 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 p diss (w) frequency (ghz) p diss vs. frequency vs. p in pin=17dbm pin=20dbm pin=22dbm v d = 20 v temp. = + 85 c i dq = 1250 ma cw
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 4 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance typical performance (small signal) 10 15 20 25 30 35 40 45 4 6 8 10 12 14 16 18 20 s21 (db) frequency (ghz) gain vs. frequency vs. v d 15v 18v 20v 22v temp. = +25 c i dq = 1250 ma 10 15 20 25 30 35 40 45 4 6 8 10 12 14 16 18 20 s21 (db) frequency (ghz) gain vs. frequency vs. i dq 1000 ma 1250 ma 1500 ma temp. = +25 c v d = 20 v 10 15 20 25 30 35 40 45 4 6 8 10 12 14 16 18 20 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 20 v, i dq = 1250 ma -30 -25 -20 -15 -10 -5 0 4 6 8 10 12 14 16 18 20 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 20 v, i dq = 1250 ma -30 -25 -20 -15 -10 -5 0 4 6 8 10 12 14 16 18 20 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 20 v, i dq = 1250 ma
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 5 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance ( cw ) 35 36 37 38 39 40 41 42 43 44 45 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 p out (dbm) frequency (ghz) p out vs. frequency vs. v d vd=18v vd=20v vd=22v p in = 20dbm temp. = +25 c i dq = 1250 ma cw 0 5 10 15 20 25 30 35 40 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=18v vd=20v vd=22v p in = 20dbm temp. = +25 c i dq = 1250 ma cw 0 500 1000 1500 2000 2500 3000 3500 4000 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d vd=18v vd=20v vd=22v p in = 20dbm temp. = +25 c i dq = 1250 ma cw -2 0 2 4 6 8 10 12 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d vd=18v vd=20v vd=22v p in = 20dbm temp. = +25 c i dq = 1250 ma cw 35 36 37 38 39 40 41 42 43 44 45 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 p out (dbm) frequency (ghz) p out vs. frequency vs. i dq idq=1000ma idq=1250ma idq=1500ma p in = 20dbm temp. = +25 c v d = 20 v cw 0 5 10 15 20 25 30 35 40 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 pae (%) frequency (ghz) pae vs. frequency vs. i dq idq=1000ma idq=1250ma idq=1500ma p in = 20dbm temp. = +25 c v d = 20 v cw
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 6 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance ( cw ) 0 500 1000 1500 2000 2500 3000 3500 4000 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 drain current (ma) frequency (ghz) drain current vs. frequency vs. i dq idq=1000ma idq=1250ma idq=1500ma p in = 20dbm temp. = +25 c v d = 20 v cw -2 0 2 4 6 8 10 12 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gate current (ma) frequency (ghz) gate current vs. frequency vs. i dq idq=1000ma idq=1250ma idq=1500ma p in = 20dbm temp. = +25 c v d = 20 v cw 30 32 34 36 38 40 42 44 46 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 p out (dbm) frequency (ghz) p out vs. frequency vs. p in . pin=10dbm pin=15dbm pin=17dbm pin=19dbm pin=20dbm temp. = +25 c v d = 20 v; i d = 1250 ma cw 0 5 10 15 20 25 30 35 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 pae (%) frequency (ghz) pae vs. frequency vs. p in . pin=10dbm pin=15dbm pin=17dbm pin=19dbm pin=20dbm temp. = +25 c v d = 20 v; i d = 1250 ma cw 34 35 36 37 38 39 40 41 42 43 44 45 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 p out (dbm) frequency (ghz) p out vs. frequency vs. temp. -40c @ pin=17dbm +25c @ pin=20dbm +85c @ pin=22dbm v d = 20 v temp. = +25 c i dq = 1250 ma cw 0 5 10 15 20 25 30 35 40 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 pae (%) frequency (ghz) pae vs. frequency vs. temp. -40c @ pin=17dbm +25c @ pin=20dbm +85c @ pin=22dbm v d = 20 v; i dq = 1250 ma temp. = +25 c cw
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 7 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance ( cw ) -2 0 2 4 6 8 10 12 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. -40c @ pin=17dbm +25c @ pin=20dbm +85c @ pin=22dbm v d = 20 v; i dq = 1250 ma temp. = +25 c cw 0 500 1000 1500 2000 2500 3000 3500 4000 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c @ pin=17dbm +25c @ pin=20dbm +85c @ pin=22dbm v d = 20 v; i dq = 1250 ma temp. = +25 c cw 10 15 20 25 30 35 40 45 -10 -6 -2 2 6 10 14 18 22 p out (dbm) p in (dbm) p out vs. p in vs. freq. 6ghz 8ghz 10ghz 12ghz 14ghz 16ghz 18ghz temp. = +25 c v d = 20 v, i dq = 1250 ma cw 0 5 10 15 20 25 30 35 -10 -6 -2 2 6 10 14 18 22 pae (%) p in (dbm) pae vs. p in vs. freq. 6ghz 8ghz 10ghz 12ghz 14ghz 16ghz 18ghz temp. = +25 c v d = 20 v, i dq = 1250 ma cw 0 500 1000 1500 2000 2500 3000 3500 4000 -10 -6 -2 2 6 10 14 18 22 drain current (ma) p in (dbm) drain current vs. p in vs. freq. 6ghz 8ghz 10ghz 12ghz 14ghz 16ghz 18ghz temp. = +25 c v d = 20 v, i dq = 1250 ma cw -2 0 2 4 6 8 10 12 14 16 -10 -6 -2 2 6 10 14 18 22 gate current (ma) p in (dbm) gate current vs. p in vs. freq. 6ghz 8ghz 10ghz 12ghz 14ghz 16ghz 18ghz temp. = +25 c v d = 20 v, i dq = 1250 ma cw
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 8 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance (linearity ) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq idq=1000ma idq=1250ma idq=1500ma v d = 20 v, 6 ghz, 10 mhz tone spacing temp. = +25 c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq idq=1000ma idq=1250ma idq=1500ma v d = 20 v, 6 ghz, 10 mhz tone spacing temp. = +25 c -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 6ghz 10ghz 12ghz 18ghz v d = 20 v, i dq = 1250 ma, 10 mhz tone spacing temp. = +25 c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency 6ghz 10ghz 12ghz 18ghz v d = 20 v, i dq = 1250 ma, 10 mhz tone spacing temp. = +25 c -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. v d vd=18v vd=20v vd=22v i dq = 1250 ma, 6 ghz, 10 mhz tone spacing temp. = +25 c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. v d vd=18v vd=20v vd=22v i dq = 1250 ma, 6 ghz, 10 mhz tone spacing temp. = +25 c
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 9 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance ( linearity ) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temp. v d = 20 v, i dq = 1250 ma, 6.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temp. v d = 20 v, i dq = 1250 ma, 6.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 2 nd harmonics (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. v d 18v 20v 22v freq. = 6 ghz temp. = +25 c i dq = 1250 ma -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 3 rd harmonics (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. v d 18v 20v 22v freq. = 6 ghz temp. = +25 c i dq = 1250 ma -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 2 nd harmonics (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. i dq idq=1000ma idq=1250ma idq=1500ma freq. = 6 ghz temp. = +25 c v d = 20 v -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 3 rd harmonics (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. i dq idq=1000ma idq=1250ma idq=1500ma freq. = 6 ghz temp. = +25 c v d = 20 v
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 10 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com typical performance ( linearity ) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 2 nd harmonics (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. freq. 6ghz 10ghz 12ghz v d = 20 v, i dq = 1250 ma temp. = +25 c -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 3 rd harmonics (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. freq. 6ghz 10ghz 12ghz v d = 20 v, i dq = 1250 ma temp. = +25 c -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 2 nd harmonics (dbc) output power @ f 0 (dbm) 2 nd harmonic vs. output power vs. temp. -40c +25c +85c freq. = 6 ghz v d = 20 v, i dq = 1250 ma -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 45 3 rd harmonics (dbc) output power @ f 0 (dbm) 3 rd harmonic vs. output power vs. temp. -40c +25c +85c freq. = 6 ghz v d = 20 v, i dq = 1250 ma
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 11 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com application circuit bias - up procedure 1. set i d limit to 4 a , i g limit to 16 ma 2. set v g to - 5.0v 3 . set v d +20 v 4 . adjust v g more positive until i dq = 12 5 0ma (v g ~ - 2.4 v typical) 5 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5.0v. ensure i dq ~ 0ma 3 . set v d to 0v 4 . turn off v d supply 5 . turn o ff v g supply
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 12 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com evaluation board (evb) layout assembly bill of materials reference design value description manufacturer part number c1 C c 12 10 u f cap, 1206, 50v, 20%, x5r various c13 C c 22 100pf//10kpf cap, 30x30 , 50v, single l ayer various c23 C c30 0.01uf cap, 0402, 50v, 10%, x7r various r1 C r 18 5.1 ? res, 0402, 50v, 5%, smt various r19 C r 2 0 5.1 ? res, 0603, 1% various . notes: the mmic can be biased from either t op or b ottom side .
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 13 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com mechanical drawing & bond pad description u n it: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size description 1 rf in 0.1 15 x 0. 190 rf input ; matched to 50? ; dc shorted to gro und 2, 12 v g 12 0. 090 x 0. 090 gate voltage 1 - 2 , bias ne twork is required; se e application circuit on page 11 as an example. 3, 11 v d1 0.1 90 x 0. 090 drain voltage 1 , bias net work is required; se e application circuit on page 11 as an example 4, 1 0 v d 2 0. 235 x 0. 090 drain voltage 2 , bias net work is required; se e application circuit on page 11 as an example. 5, 9 v g3 0. 090 x 0. 090 gate voltage 3 , bias ne twork is required; se e application circuit on page 11 as an example. 6, 8 v d 3 0. 508 x 0. 09 0 drain voltage 3, bias network is required; see application circuit on page 11 as an example . 7 rf out 0.1 15 x 0. 190 rf output; matched to 50? ; dc shorted to ground
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 14 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be don e in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/2 0) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred int erconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
QPA1013D 6 C 18ghz 10w gan power amplifier datasheet: rev b 03 - 2 8 - 16 - 15 of 15 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com , www.qorvo.com important notice the information contained herein is believed to be reli able. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to chang e without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any p atent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales an d distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability use ausn (80/2 0) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum . rohs compliance this part is compliant with eu 2 002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : 3a001.b .2 .c

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